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The European Physical Journal B
ISSN: 1434-6028 (printed version)
ISSN: 1434-6036 (electronic version)
Abstract Volume 5 Issue 3 (1998) pp 801-804
Island distance in one-dimensional epitaxial growth
H. Kallabis (1)(2), P.L. Krapivsky (2), D.E. Wolf (1)(2)
(1) FB 10, Theoretische Physik, Gerhard-Mercator-Universität Duisburg, 47048 Duisburg, Germany
(2) Center for Polymer Studies, Boston University, Boston, 02215 MA, USA
Received: 26 May 1998 / Accepted: 23 June 1998
Abstract: The typical island distance $\ell$ in submonolayer epitaxial growth depends on the growth conditions via an exponent $\gamma$. This exponent is known to depend on the substrate dimensionality, the dimension of the islands, and the size i* of the critical nucleus for island formation. In this paper we study the dependence of $\gamma$ on i* in one-dimensional epitaxial growth. We derive that $\gamma=i^{*}/(2i^{*}+3)$ for $i^{*}\geq 2$ and confirm this result by computer simulations.
PACS. 81.15.z Methods of deposition of films and coatings; film growth and epitaxy - 81.10.Bk Growth from vapor - 05.50.+q Lattice theory and statistics; Ising problems
Article in PDF format (258 KB)
Online publication: October 26, 1998
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