Springer LINK: The European Physical Journal B - Abstract Volume 5 Issue 1 (1998) pp 143-152

The European Physical Journal B

ISSN: 1434-6028 (printed version)
ISSN: 1434-6036 (electronic version)

Table of Contents

Abstract Volume 5 Issue 1 (1998) pp 143-152

General plasma behavior in the energy relaxation of electrons in highly p-doped semiconductors

U. Hohenester (1) (a), P. Kocevar (2), N.E. Hecker (3), R. Rodrigues-Herzog (4)

(1) Istituto Nazionale per la Fisica della Materia (INFM) and Dipartimento di Fisca, Università di Modena, 41100 Modena, Italy
(2) Institut für Theoretische Physik, Karl-Franzens-Universität Graz, 8010 Graz, Austria
(3) Institut für Experimentalphysik, Universität Innsbruck, 6020 Innsbruck, Austria
(4) Département de Chimie Physique, Université de Genève, 1211 Geneva and Institut für Physik, Universität Basel, 4056 Basel, Switzerland

Received: 1st April 1998 / Revised: 6 May 1998 / Accepted: 18 May 1998

Abstract: We present a systematic study of the dependence of the energy relaxation of photo-excited minority electrons on the doping concentration in highly p-doped GaAs. A nonmonotonic dependence is found in the region where the characteristics of the carrier-carrier interaction changes from plasmon-mediated to quasistatically screened. Using a detailed Monte-Carlo study we are able to attribute this observation to a general property of plasmas at high density.

PACS. 78.47.+p Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter - 72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping - 71.10.Ca Electron gas, Fermi gas

(a) email: hohenester@unimo.it.

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