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The European Physical Journal B
ISSN: 1434-6028 (printed version)
ISSN: 1434-6036 (electronic version)
Abstract Volume 3 Issue 4 (1998) pp 421-426
Charge density wave transport in submicron antidot arrays in NbSe$\mathsf{_3}$
Y.I. Latyshev (1)(2), B. Pannetier (1), P. Monceau (1) (a)
(1) Centre de Recherches sur les Très Basses Températures, Laboratoire associé à l'Université Joseph Fourier, CNRS, BP 166, 38042 Grenoble Cedex 9, France
(2) Institut of Radioengineering and Electronics, Russian Academy of Sciences, Mokhovaya 11, 103907 Moscow, Russia
Received: 25 November 1997 / Received in final form: 30 March 1998 / Accepted: 6 April 1998
Abstract: We demonstrate for the first time that a periodic array of submicrometer holes (antidots) can be patterned into thin single NbSe3 crystals. We report on the study of Charge Density Wave (CDW) transport of the network of mesoscopic units between antidots. Size of the elementary unit can be as small as 0.5 µm along the chain axis and $0.2 \mu{\rm m}\times 0.3 \mu{\rm m}$ in cross-section. We observe size effects for Ohmic residual resistance and in CDW transport current-voltage characteristics in submicronic networks.
PACS. 71.45.Lr Charge-density-waves systems - 73.20.Mf Collective excitations (including plasmons and other charge-density excitations) - 73.23.Ps Other electronic properties of mesoscopic systems
(a) email: monceau@labs.polycnrs-gre.fr
Article in PDF-Format (317 KB)
Online publication: July 22, 1998
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