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The European Physical Journal B
ISSN: 1434-6028 (printed version)
ISSN: 1434-6036 (electronic version)
Abstract Volume 3 Issue 2 (1998) pp 257-261
Resonance splitting effect in semiconductor superlattices
Y. Guo (1)(3) (a), B.-L. Gu (1)(2), Z.-Q. Li (3), Q. Sun (3), Y. Kawazoe (3)
(1) Department of Physics, Tsinghua University, Beijing 100084, P.R. China
(2) Center for Advanced Study, Tsinghua University, Beijing 100084, P.R. China
(3) Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
Received: 12 October 1997/ Revised and Accepted: 5 January 1998
Abstract: The resonance splitting in finite semiconductor superlattices which consist of a number of electric barriers is investigated. It is found that (n-1)-fold splitting for n-barrier tunneling obtained in periodic superlattices of identical barriers no longer holds for superlattices which are periodically juxtaposed with two different building barriers. In general, one resonant domain in the former splits into two resonant subdomains in the latter, and splitting occurs each time when two new barriers are added. The results indicate that the resonance splitting is determined not only by the structure but also by the parameters of building blocks.
PACS. 73.40.Gk Tunneling - 73.40.Kp III-V semiconductor-to-semiconductor contact, p-n junctions, and heterojunctions
(a) email: guoy@phys.tsinghua.edu.cn
Article in PDF-Format (266 KB)
Online publication: July 9, 1998
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